Surface states and charge accumulation states on reconstructed InAs(001) surfaces

[1]  M. Grundmann.  The Physics of Semiconductors , 2021, Graduate Texts in Physics.

[2]  Frank Rutz,et al.  InAs/GaSb superlattice infrared detectors , 2013 .

[3]  Yasuyuki Miyamoto,et al.  InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications , 2013 .

[4]  S. Bengió,et al.  Electronic structure of reconstructed Au(100): Two-dimensional and one-dimensional surface states , 2012 .

[5]  M. Goryl,et al.  Structure of the In-rich InAs (001) surface , 2011 .

[6]  B. Doyle,et al.  Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing , 2009 .

[7]  K. Ploog,et al.  As-rich InAs(001)-(2×4) phases investigated by in situ surface x-ray diffraction , 2008 .

[8]  E. Placidi,et al.  Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces , 2005 .

[9]  O. Tereshchenko,et al.  Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments , 2003 .

[10]  S. Tsukamoto,et al.  Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs( 0 0 1 ) surfaces , 2003 .

[11]  William Barvosa-Carter,et al.  Arsenic flux dependence of island nucleation on InAs(001). , 2002, Physical review letters.

[12]  R. S. Ross,et al.  Atomic scale structure of InAs(001)-(2×4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory , 2002 .

[13]  O. Bunk,et al.  Structure of metal-rich Ñ001Ö surfaces of III-V compound semiconductors , 2001 .

[14]  O. Bunk,et al.  Subsurface dimerization in III-V semiconductor (001) surfaces. , 2001, Physical review letters.

[15]  H. Lüth.  Solid Surfaces, Interfaces and Thin Films , 2001 .

[16]  G. P. Srivastava,et al.  Structure and electronic states of InAs(001)-(2×4) surfaces , 2000 .

[17]  Christian Ratsch,et al.  Surface reconstructions for InAs(001) studied with density-functional theory and STM , 2000 .

[18]  A. Cricenti,et al.  Atomic structure of the As-rich InAs(100)β2(2×4)surface , 1999 .

[19]  Louise Olsson,et al.  The electronic structure of In- and As-terminated InAs(001) surfaces , 1997 .

[20]  Bell,et al.  Plasmon excitations and accumulation layers in heavily doped InAs(001). , 1996, Physical review. B, Condensed matter.

[21]  Karlsson,et al.  Charge accumulation at InAs surfaces. , 1996, Physical review letters.

[22]  Noguchi,et al.  Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces. , 1991, Physical review letters.

[23]  J. M. McGregor,et al.  BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS , 1990 .

[24]  Gerald B. Stringfellow,et al.  Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy , 1990 .