Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
暂无分享,去创建一个
Gaudenzio Meneghesso | Enrico Zanoni | Matteo Meneghini | Isabella Rossetto | Carlo De Santi | Eldad Bahat-Treidel | Oliver Hilt | Stefano Dalcanale | Eldad Bahat Treidel | M. Meneghini | G. Meneghesso | E. Zanoni | C. de Santi | I. Rossetto | O. Hilt | S. Dalcanale | J. Wuerfl | Joachim Wuerfl
[1] Jan Kuzmik,et al. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors , 2015 .
[2] Guido Groeseneken,et al. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors , 2015, IEEE Electron Device Letters.
[3] V. A. Kagadei,et al. High threshold voltage p-gate GaN transistors , 2015, 2015 International Siberian Conference on Control and Communications (SIBCON).
[4] Kenichiro Tanaka,et al. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[5] Frank Brunner,et al. 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[6] Guido Groeseneken,et al. Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs , 2015, 2015 IEEE International Reliability Physics Symposium.
[7] O. Ambacher,et al. Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V , 2015, IEEE Transactions on Electron Devices.
[8] Jian-jang Huang,et al. Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors , 2015, IEEE Electron Device Letters.
[9] Daisuke Ueda,et al. GaN transistors on Si for switching and high-frequency applications , 2014 .
[10] Jian Jang Huang,et al. Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer , 2014, IEEE Transactions on Electron Devices.
[11] M. Meneghini,et al. Degradation of AlGaN/GaN HEMT devices , 2013 .
[12] Gaudenzio Meneghesso,et al. AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction , 2013, IEEE Transactions on Electron Devices.
[13] S. Decoutere,et al. Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).
[14] Vl. Kolkovsky,et al. A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN , 2012 .
[15] G. Meneghesso,et al. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate , 2012, IEEE Electron Device Letters.
[16] Gaudenzio Meneghesso,et al. Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model , 2011, 2011 International Electron Devices Meeting.
[17] J. Wurfl,et al. Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
[18] Anderson Janotti,et al. Carbon impurities and the yellow luminescence in GaN , 2010 .
[19] Gaudenzio Meneghesso,et al. Electron and hole-related luminescence processes in gate injection transistors , 2010 .
[20] J. Wurfl,et al. Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[21] Jing Li,et al. Nature of deep center emissions in GaN , 2010 .
[22] N. Hara,et al. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics , 2010, IEEE Electron Device Letters.
[23] M. Meneghini,et al. Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing , 2009, IEEE Electron Device Letters.
[24] S. Kishimoto,et al. Normally-off AlGaN/GaN MOSHFETS with HfO2 gate oxide , 2008 .
[25] H. Ishida,et al. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.
[26] C. Ho,et al. Reliability analysis using Weibull distribution on the breakdown of MIM capacitors , 2007, 2007 International Microsystems, Packaging, Assembly and Circuits Technology.
[27] H. Ishida,et al. A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation , 2006, 2006 International Electron Devices Meeting.
[28] Yugang Zhou,et al. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode , 2006, IEEE Transactions on Electron Devices.
[29] Ilesanmi Adesida,et al. Characterization of Pd/Ni/Au ohmic contacts on p-GaN , 2005 .
[30] Tetsuya Suemitsu,et al. Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors , 2001 .
[31] Michael S. Shur,et al. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate , 2000 .
[32] Guido Groeseneken,et al. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .
[33] B. Yeats,et al. Assessing the reliability of silicon nitride capacitors in a GaAs IC process , 1998 .
[34] Guido Groeseneken,et al. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown , 1998 .