论文信息 - InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Abstract InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Transmission electron microscopy shows the increase in the island size as compared to the InAs/InGaAs quantum dots. Room temperature photoluminescence at 1.55 μm has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 μm. The effect of nitrogen concentration on the PL peak position and intensity has been studied.

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