论文信息 - Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control

Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control

The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter Of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.

[1] H. Ohno,et al. Double heterostructure Ga0.47In0.53As MESFETs with submicron gates , 1980, IEEE Electron Device Letters.

[2] W. A. Gambling,et al. Zero total dispersion in graded-index single-mode fibres , 1979 .

[3] H. Ohno,et al. Double heterostructure Ga0.47In0.53As MESFETs by MBE , 1980, IEEE Electron Device Letters.

[4] B. Miller,et al. GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch , 1980 .