Selection of rare earth silicates for highly scaled gate dielectrics
暂无分享,去创建一个
Hiroshi Iwai | Nobuyuki Sugii | Kuniyuki Kakushima | Parhat Ahmet | Kazuo Tsutsui | Takamasa Kawanago | H. Iwai | T. Hattori | N. Sugii | K. Tachi | P. Ahmet | K. Kakushima | K. Tsutsui | K. Tachi | K. Okamoto | T. Koyanagi | Miyuki Kouda | Jinhan Song | T. Hattori | T. Kawanago | K. Okamoto | T. Koyanagi | M. Kouda | Jinhan Song
[1] Hiroshi Iwai,et al. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation , 2009 .
[2] Advantage of La2O3 gate dielectric over HfO2 for direct contact and mobility improvment , 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.
[3] Daniel J. Lichtenwalner,et al. Overview of Materials Processing and Properties of Lanthanum-Based High-k Dielectrics , 2007 .
[4] A. Toriumi,et al. 0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO 2 and Si substrate , 2007 .
[5] S. Miyazaki,et al. Praseodymium silicate formed by postdeposition high-temperature annealing , 2004 .
[6] T. Ishikawa,et al. High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems , 2003 .
[7] Y. Teterin,et al. Structure of X-ray photoelectron spectra of lanthanide compounds , 2002 .
[8] H. Osten,et al. Epitaxial praseodymium oxide: a new high-k dielectric , 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).
[9] F. Decker,et al. Sputter deposited cerium-vanadium oxide: optical characterization and electrochromic behavior , 2001 .
[10] Hiroshi Iwai,et al. CMOS technology-year 2010 and beyond , 1999, IEEE J. Solid State Circuits.