论文信息 - Drift velocity saturation in MOS transistors

Drift velocity saturation in MOS transistors

It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.

H. Beneking | H. Beneking | G. Baum | G. Baum

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