Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide

We report room temperature direct gap electroluminescence (EL) from a Ge/Si0.15Ge0.85 multiple quantum well (MQW) waveguide. The excitonic direct gap transition and the dependence of the EL intensity on the injection currents and temperature are clearly observed. EL from the Ge/SiGe MQWs is shown to have a transverse-electric polarization. These results demonstrate the strong potential of the Ge/Si0.15Ge0.85 MQWs in terms of the realization of a monolithically integrated light source on the Si platform.

[1]  L. Vivien,et al.  Ge/SiGe multiple quantum well photodiode with 30 GHz bandwidth , 2011 .

[2]  Jurgen Michel,et al.  Direct gap photoluminescence of n-type tensile-strained Ge-on-Si , 2009 .

[3]  R. Bechmann,et al.  Numerical data and functional relationships in science and technology , 1969 .

[4]  Y. P. Varshni.  Temperature dependence of the energy gap in semiconductors , 1967 .

[5]  Jurgen Michel,et al.  Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators , 2008 .

[6]  Sangam Chatterjee,et al.  Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion , 2009 .

[7]  Joel N. Schulman,et al.  Wave Mechanics Applied to Semiconductor Heterostructures , 1991 .

[8]  D. Miller,et al.  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon , 2005, Nature.

[9]  Xavier Le Roux,et al.  Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides. , 2011, Optics letters.

[10]  Di Liang,et al.  Recent progress in lasers on silicon , 2010 .

[11]  Jurgen Michel,et al.  Direct-gap optical gain of Ge on Si at room temperature. , 2009, Optics letters.

[12]  Giovanni Isella,et al.  Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers , 2011 .

[13]  L. D. Negro,et al.  Optical gain in silicon nanocrystals , 2000, Nature.

[14]  P. Crozat,et al.  42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.

[15]  Jurgen Michel,et al.  Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. , 2007, Optics express.

[16]  Jesse Lu,et al.  Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. , 2009, Optics express.

[17]  J. Michel,et al.  Toward a Germanium Laser for Integrated Silicon Photonics , 2010, IEEE Journal of Selected Topics in Quantum Electronics.

[18]  Xavier Le Roux,et al.  Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures. , 2010, Optics letters.

[19]  Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate , 2009 .

[20]  Giovanni Isella,et al.  Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices , 2004 .

[21]  J. Michel,et al.  Ge-on-Si laser operating at room temperature. , 2010, Optics letters.

[22]  Jurgen Michel,et al.  Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. , 2009, Optics letters.