Dynamic Charge Sharing modeling for surface potential based models

Adaptative body bias has been recently pointed out to boost device performance and to reduce power consumption. An accurate description of back bias dependence is required to correctly model the electrical behaviour of such devices. This paper is focused on the electrical characterization and the surface potential based compact modeling of the threshold voltages shifts induced by back bias polarization for various gate length at various drain voltages. The descritpion of the ”dynamic charge sharing” model is proposed and compared to the ”charge sharing” model originally developped for threshold voltage models. Electrical data from the 45 and the 65 nm nodes have been characterized to underline the threshold voltages shifts versus back bias polarization behavior from long to short channel. Finally the electrical model behaviour for back bias polarization has been compared to the experimental data.