论文信息 - High-gain wideband V-band multi-stage power MMICs

High-gain wideband V-band multi-stage power MMICs

V-band two-stage and three-stage MMIC wideband power amplifiers and MMIC doubler/amplifier have been designed and fabricated for output stages in transmitters and LO buffer amplifiers. A 0.15 /spl mu/m T-shaped gate AlGaAs-InGaAs heterojunction FET (HJFET) with high gain at millimeter-wave frequencies is employed as the active device. In the amplifier circuit design here, we utilize matching circuits consisting of RF shorted stubs for the wideband operations with no feedback mechanism, taking account of the circuit stability to prevent parasitic low and intermediate frequency oscillations. A fabricated three stage MMIC power amplifier has exhibited 22 dB linear gain, 12 GHz bandwidth and more than 22 dBm output power, and a doubler/amplifier 9.1 dB conversion-gain, 16.8 dBm output power and 4 GHz bandwidth.

Takashi Inoue | K. Hosoya | K. Ohata

[1] Kenichi Hosoya,et al. 60GHz dielectrically stabillized monolithic voltage controlled oscillator , 1995, 1995 25th European Microwave Conference.

[2] S. Weinreb,et al. Compact high gain W-band and V-band pseudomorphic HEMT MMIC power amplifiers , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[3] Keiichi Ohata,et al. Sixty-GHz-band ultra-miniature monolithic T/R modules for multimedia wireless communication systems , 1996 .

[4] J.C. Chen,et al. V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers , 1992, IEEE Microwave and Guided Wave Letters.

[5] Takashi Inoue,et al. Millimeter wave heterojunction FET monolithic integrated circuits for compact communication systems , 1995 .

[6] M. Funabashi,et al. A 60 GHz MMIC stabilized frequency source composed of a 30 GHz DRO and a doubler , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.