论文信息 - Modeling and Control of a Metalorganic Chemical Vapor Deposition Process for III-V Compound Semiconductor Epitaxy

Modeling and Control of a Metalorganic Chemical Vapor Deposition Process for III-V Compound Semiconductor Epitaxy

Abstract Real-time control of metalorganic chemical vapor deposition (MOCVD) processes has been shown to improve the composition and thickness precision in the growth of compound semiconductor films. A system model of the MOCVD process is developed to improve the application of control. The model is used to simulate growth of GaInAs. Estimates of the GaAs fraction, from simulated growths, are compared to measured composition results. The model estimates and post-growth data are in good agreement.

Archie L. Holmes | Steven P. DenBaars | Monique S. Gaffney | Roy S. Smith | C. M. Reaves

[1] Piet Demeester,et al. 16% external quantum efficiency from planar microcavity LEDs at 940nm by precise matching of cavity wavelength , 1995 .

[2] R. Dupuis. Metalorganic Chemical Vapor Deposition of III-V Semiconductors , 1984, Science.

[3] J. P. Stagg,et al. Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics , 1992 .

[4] Dimitrios I. Fotiadis,et al. Detailed models of the MOVPE process , 1991 .

[5] N. Kobayashi. In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption , 1994 .

[6] G. Bastard. Energy levels and alloy scattering in InP‐In (Ga)As heterojunctions , 1983 .