Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
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S. Trellenkamp | H. Lüth | D. Grützmacher | M. Mikulics | Zdenek Sofer | D. Gregušová | P. Kordos | M. Marso | P. Šimek | H. Hardtdegen