Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 /spl mu/m quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.

[1]  M. Hopkinson,et al.  High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents , 2005, IEEE Photonics Technology Letters.

[2]  Ching-Fuh Lin,et al.  Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells , 1996, IEEE Photonics Technology Letters.

[3]  Wei Zhou,et al.  Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum , 1999 .

[4]  Z.G. Wang,et al.  High-performance quantum-dot superluminescent diodes , 2004, IEEE Photonics Technology Letters.

[5]  Joseph M. Schmitt,et al.  Optical coherence tomography (OCT): a review , 1999 .

[6]  D. Bimberg,et al.  Theory of random population for quantum dots , 1997 .

[7]  Yang Liu,et al.  High-power integrated superluminescent light source , 2003 .

[8]  Lorenzo Occhi,et al.  Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers , 2005 .

[9]  M. S. Skolnick,et al.  Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure , 2003 .

[10]  Kristian M. Groom,et al.  Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer , 2004 .

[11]  M. S. Skolnick,et al.  Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers , 2005 .

[12]  J. Aitchison,et al.  Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process , 1999, IEEE Photonics Technology Letters.

[13]  D. Heo,et al.  Study on superluminescent diodes using InGaAs-InAs chirped quantum dots , 2004 .

[14]  Dan Birkedal,et al.  Submonolayer InGaAs∕GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor , 2004 .

[15]  Il Ki Han,et al.  High power broadband InGaAs/GaAs quantum dot superluminescent diodes , 2003 .