V-1 – Chemical Etching

[1]  J. Kelly,et al.  Electrochemical Aspects of the Beveling of Sputtered Permalloy Films , 1978 .

[2]  C. A. Deckert.  Etching of CVD Si3 N 4 in Acidic Fluoride Media , 1978 .

[3]  J. D. Wiley,et al.  Electromechanical devices utilizing thin Si diaphragms , 1977 .

[4]  K. Petersen.  Micromechanical light modulator array fabricated on silicon , 1977 .

[5]  C. Wilmsen,et al.  MOS processing for III–V compound semiconductors: Overview and bibliography , 1977 .

[6]  M. Murthy,et al.  On the Electropolishing of Molybdenum , 1977 .

[7]  W. Kern,et al.  Advances in deposition processes for passivation films , 1977 .

[8]  S. Ghandhi,et al.  Vapor‐Phase Etching and Polishing of GaAs Using Arsenic Trichloride , 1977 .

[9]  K. Jinno,et al.  Etching Characteristics of Silicate Glass Films in CF 4 Plasma , 1977 .

[10]  K. Chow,et al.  Phosphorus Concentration of Chemical Vapor Deposited Phosphosilicate Glass , 1977 .

[11]  S. Ghandhi,et al.  Electrochemical Patterning of Tin Oxide Films , 1977 .

[12]  S. Wagner,et al.  A Chemical Polish for the Cadmium and Sulfur Faces of Cadmium Sulfide , 1977 .

[13]  G. Kelsey.  The Anodic Behavior of Group Six Metals in Methanolic Solution , 1977 .

[14]  G. Kelsey,et al.  The Anodic Oxidation of Tungsten in Aqueous Base , 1977 .

[15]  K. Iida.  Polycrystalline Aluminum Oxide Anodization on Silicon , 1977 .

[16]  J. O. Mccaldin,et al.  Physical Contact Properties of Beryllium Metallization on Silicon Devices , 1977 .

[17]  A. Cho,et al.  Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition , 1977 .

[18]  Michael M. Schieber,et al.  Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds , 1977 .

[19]  Y. Lam,et al.  Physical and conduction measurements of spin-on oxide , 1977 .

[20]  Y. Arita,et al.  Formation and Properties of Porous Silicon Film , 1977 .

[21]  Kouhei Furuno,et al.  A Modified Method of Etching Semiconductors and Manufacturing Thin Silicon Solid-State Detectors , 1977 .

[22]  M. Yoshida,et al.  Application of Aluminum Oxide to Integrated Circuits Fabrication , 1976, IEEE Transactions on Reliability.

[23]  O. F. Devereux,et al.  Mechanical Failure of Anodic Films on Aluminum and Tantalum , 1976 .

[24]  E. Bassous,et al.  Topology of Silicon Structures with Recessed SiO2 , 1976 .

[25]  J. A. Blodgett,et al.  Holographic Study of Electropolishing , 1976 .

[26]  D. Frohman-Bentchkowsky,et al.  Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices , 1976 .

[27]  C. Backus,et al.  On black solar cells or the tetrahedral texturing of a silicon surface , 1976, IEEE Transactions on Electron Devices.

[28]  O. Wada,et al.  Process for GaAs Monolithic Integration Applied to Gunn‐Effect Logic Circuits , 1976 .

[29]  G. Schnable,et al.  Applications of Electrochemistry to Fabrication of Semiconductor Devices , 1976 .

[30]  S. Somekh,et al.  Introduction to ion and plasma etching , 1976 .

[31]  M. Murthy,et al.  Application of Wagner's Theory to the Electropolishing of Aluminum , 1976 .

[32]  H. D. Barber,et al.  Repeated Removal of Thin Layers of Silicon by Anodic Oxidation , 1976 .

[33]  R. Tijburg,et al.  Advances in etching of semiconductor devices , 1976 .

[34]  L. Eastman,et al.  In situ in etching technique for l.p.e. InP , 1976 .

[35]  R. A. Logan,et al.  GaAs Double Heterostructure Lasers Fabricated by Wet Chemical Etching , 1976, Integrated Optics.

[36]  C. Svensson,et al.  Control of Palladium Adherence to Silicon Dioxide for Photolithographic Etching , 1976 .

[37]  A. Milch.  Etch Polishing of GaP Single Crystals by Aqueous Solutions of Chlorine and Iodine , 1976 .

[38]  L. Katz,et al.  Mechanical‐Chemical Technique for Removal of Epitaxial Spikes , 1976 .

[39]  B. Schwartz,et al.  The Anodization of GaAs and GaP in Aqueous Solutions , 1976 .

[40]  G. Olsen,et al.  Use of thin carbon films for selective chemical etching and epitaxial deposition of III‐V semiconductors , 1976 .

[41]  P. T. Lin,et al.  Characteristics of p‐Doped Polysilicon with B 2 H 6 Used as In Situ Dopant Source , 1976 .

[42]  R. P. Frankenthal,et al.  The Anodic Behavior of Gold in Sulfuric Acid Solutions Effect of Chloride and Electrode Potential , 1976 .

[43]  M. Otsubo,et al.  Preferential Etching of GaAs Through Photoresist Masks , 1976 .

[44]  T. Dongen,et al.  Selective Etching of III‐V Compounds with Redox Systems , 1976 .

[45]  A. Shintani,et al.  Etching of GaN Using Phosphoric Acid , 1976 .

[46]  R. P. Frankenthal,et al.  Electroetching of Platinum in the Titanium‐Platinum‐Gold Metallization on Silicon Integrated Circuits , 1976 .

[47]  A. J. Hughes,et al.  Etching methods for indium oxide/tin oxide films , 1976 .

[48]  H. Stein.  Hydrogen content and annealing of memory quality silicon-oxynitride films , 1976 .

[49]  M. Inoue,et al.  Selective Etching of GaP Crystals with Hot Phosphoric Acid , 1976 .

[50]  J. A. Howard,et al.  Sulfur Hexafluoride Etching Effects in Silicon , 1976 .

[51]  D. R. Oswald.  Automatic Chemical Processing for Silicon Wafers , 1976 .

[52]  W. Fahrner,et al.  Passivation of High Breakdown Voltage p‐n‐p Structures by Thermal Oxidation , 1976 .

[53]  James Kane,et al.  Chemical Vapor Deposition of Antimony‐Doped Tin Oxide Films Formed from Dibutyl Tin Diacetate , 1976 .

[54]  B. Macdougall,et al.  Anodic Oxide Films on Nickel in Acid Solutions , 1976 .

[55]  J. Vossen.  Inhibition of chemical sputtering of organics and C by trace amounts of Cu surface contamination , 1976 .

[56]  E. Kelly.  Anodic Dissolution of Titanium in Acidic Sulfate Solutions II . Effects of Ti(III) and Ti(IV) Ions , 1976 .

[57]  W. Kern,et al.  The Effect of Substrate Bias on the Properties of Reactively Sputtered Silicon Nitride , 1976 .

[58]  T. Chu,et al.  Electrolytic Etching of Boron Phosphide , 1976 .

[59]  R. Gessner,et al.  SELECTIVE ETCHING AND EPITAXIAL REFILLING OF SILICON WELLS IN THE SYSTEM SiH4/HCl/H2 , 1975 .

[60]  F. Bachner,et al.  Properties of Sn-doped In/sub 2/O/sub 3/ films prepared by rf sputtering (solar energy collector) , 1975 .

[61]  V. D. Wohlheiter.  Silicon Nitride Ledge Removal Techniques for Integrated Circuit Devices , 1975 .

[62]  R. Smeltzer.  Epitaxial Deposition of Silicon in Deep Grooves , 1975 .

[63]  M. Hirayama,et al.  CVD‐BN for Boron Diffusion in Si and Its Application to Si Devices , 1975 .

[64]  P. Wyatt.  Dielectric Anisotropy in Amorphous Ta[sub 2]O[sub 5] Films , 1975 .

[65]  D. Rode,et al.  {332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH Etching , 1975 .

[66]  Frank J. Bachner,et al.  Properties of Sn‐Doped In2 O 3 Films Prepared by RF Sputtering , 1975 .

[67]  G. Schwartz,et al.  An Anodic Process for Forming Planar Interconnection Metallization for Multilevel LSI , 1975 .

[68]  M. Faktor,et al.  Electrochemically Etched Tunnels in Gallium Arsenide , 1975 .

[69]  Y. Igarashi,et al.  Formation and Properties of Porous Silicon and Its Application , 1975 .

[70]  S. Ghandhi,et al.  Vapor‐Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride Gas , 1975 .

[71]  M. Shehata,et al.  Formation and structure of anodic films on beryllium , 1975 .

[72]  T. Kasai.  Adjustment of Bubble Collapse Field of Garnet Films by Chemical Etching , 1975 .

[73]  W. Kern,et al.  Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tin , 1975 .

[74]  C. Schmidt,et al.  Preparation of thin windows in silicon masks for x‐ray lithography , 1975 .

[75]  G. J. Kominiak.  Silicon Nitride Films by Direct RF Sputter Deposition , 1975 .

[76]  J. Freyer.  Investigations of the Fabrication of Thin Silicon Films for Microwave Semiconductor Transit Time Devices , 1975 .

[77]  Robert B. Comizzoli,et al.  Passivation Coatings on Silicon Devices , 1975 .

[78]  S. Licht.  Technique for controlled adjustment of bubble collapse field in epitaxial garnet films by etching , 1975 .

[79]  J. Kelly,et al.  An Electrochemical Study of Undercutting during Etching of Duplex Metal Films , 1975 .

[80]  H. Matsui,et al.  Multilayer Metallization with Planar Interconnect Structure Utilizing CVD Al2 O 3 Film , 1975 .

[81]  T. Chu,et al.  The Preparation and Properties of Aluminum Nitride Films , 1975 .

[82]  J. Hirvonen,et al.  Reactions Between the Ta‐Pt‐Ta‐Au Metallization and PtSi Ohmic Contacts , 1975 .

[83]  P. Holloway,et al.  On Chemical Cleaning for Thermocompression Bonding , 1975 .

[84]  P. Petroff,et al.  Effect of Reactant Nitrogen Pressure on the Microstructure and Properties of Reactively Sputtered Silicon Nitride Films , 1975 .

[85]  M. Rand.  I‐V Characteristics of PtSi ‐ Si Contacts Made from CVD Platinum , 1975 .

[86]  T. Agatsuma,et al.  Beveling Aluminum in Multilayer Metal Circuitry , 1975 .

[87]  G. Mcguire,et al.  Auger Electron Spectroscopy of Cleanup‐Related Contamination on Silicon Surfaces , 1975 .

[88]  D. F. Weirauch.  Correlation of the anisotropic etching of single−crystal silicon spheres and wafers , 1975 .

[89]  J. Wagner,et al.  Formation of Silica Films on Silicon Using Silane and Carbon Dioxide , 1975 .

[90]  J. Meindl,et al.  Optimization of the Hydrazine‐Water Solution for Anisotropic Etching of Silicon in Integrated Circuit Technology , 1975 .

[91]  B. Schwartz,et al.  Preparation and Stabilization of Anodic Oxides on GaAs , 1975 .

[92]  A. Yamamoto,et al.  Anodic Dissolution of N‐Type Gallium Arsenide under Illumination , 1975 .

[93]  T. A. Shankoff,et al.  High Resolution Tungsten Patterning Using Buffered, Mildly Basic Etching Solutions , 1975 .

[94]  B. Tuck.  The chemical polishing of semiconductors , 1975 .

[95]  Bertram Schwartz,et al.  Electrolytic etching and electron mobility of GaAs for FET's , 1974 .

[96]  M. F. Ehman.  Surface Preparation of Ceramic Oxide Crystals: Work Damage and Microhardness , 1974 .

[97]  J. Gannon,et al.  A Chemical Etchant for the Selective Removal of GaAs Through SiO2 Masks , 1974 .

[98]  I. Beinglass,et al.  A New Method for Chemical Vapor Deposition of Silicon Dioxide , 1974 .

[99]  V. Pickhardt,et al.  Chemomechanical Polishing of CdS , 1974 .

[100]  D. Rousseau,et al.  Iron Oxide—An Inorganic Photoresist and Mask Material , 1974 .

[101]  T. Kamins.  Hall mobility in dielectrically isolated single-crystal silicon films defined by electrochemical etching , 1974 .

[102]  R. Kushner,et al.  Ion migration effects in r.f. “sputter cleaning” of dielectric films , 1974 .

[103]  G. W. Kammlott,et al.  Fe2 O 3—An Inorganic Electron Resist Material , 1974 .

[104]  K. Bean,et al.  Application of silicon crystal orientation and anisotropic effects to the control of charge spreading in devices , 1974 .

[105]  Lillian Rankel Plauger.  Controlled Chemical Etching of GaP , 1974 .

[106]  T. Kamins.  Diffusion in Thin Silicon Films Formed by Electrochemical Etching , 1974 .

[107]  F. Okamoto.  Chemical Etchants for the Fabrication of Thin Film Patterns of Silver on Acid- and Base-Sensitive Oxides , 1974 .

[108]  G. H. Frischat,et al.  Etching of Al2O3 Surfaces with Molten V2O5 , 1974 .

[109]  D. Kiewit,et al.  Germanium Surface Cleaning—An Auger Analysis , 1974 .

[110]  M. Rand,et al.  Observations on the formation and etching of platinum silicide , 1974 .

[111]  D. Miller.  The Etch Rate of Gadolinium Gallium Garnet in Concentrated Phosphoric Acid of Varying Composition , 1973 .

[112]  R. Bicknell.  A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductors , 1973 .

[113]  D. M. Mattox,et al.  Physical Properties of Thick Sputter‐Deposited Glass Films , 1973 .

[114]  G. Kuhn,et al.  Thin Silicon Film on Insulating Substrate , 1973 .

[115]  B. Tuck,et al.  Chemical etching of {1 1 1} and {1 0 0} surfaces of InP , 1973 .

[116]  R. Dexter,et al.  Etch Rate Characterization of Boron‐Implanted Thermally Grown SiO2 , 1973 .

[117]  Lillian Rankel Plauger.  Etching Studies of Diffusion Source Boron Glass , 1973 .

[118]  A. U. Macrae,et al.  Tapered windows in SiO 2 by ion implantation , 1973 .

[119]  C. Dell'Oca.  Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride , 1973 .

[120]  R. Meek,et al.  Silicon Surface Contamination: Polishing and Cleaning , 1973 .

[121]  M. Ghezzo,et al.  Etch Rates of Doped Oxides in Solutions of Buffered HF , 1973 .

[122]  C. C. Chang,et al.  Structure and chemistry of silicon surfaces after pre- and backsputtering, studied with Auger spectroscopy, ellipsometry, and RHEED , 1973 .

[123]  H. Hartnagel,et al.  A contribution to etch polishing of GaAs , 1973 .

[124]  I. Dalins,et al.  A Study of the Effectiveness of the Standard Surface Cleaning Techniques as Applied to Ni(111), Ni(100), and Ni Sheet Using Auger Electron Spectroscopy (AES) , 1973 .

[125]  C. Nuese,et al.  Vapor Growth of In1 − x Ga x P for P‐N Junction Electroluminescence I . Material Preparation , 1973 .

[126]  M. Rand,et al.  Silicon Oxynitride Films from the NO ‐ NH 3 ‐ SiH4 Reaction , 1973 .

[127]  Arthur J. Learn,et al.  Effect of structure and processing on electromigration‐induced failure in anodized aluminum , 1973 .

[128]  C. R. Elliott,et al.  The electrochemical characterization of n-type gallium arsenide , 1973 .

[129]  J. M. Green.  The Etch Rate and Deterioration of Magnesium Aluminum Spinel in Hydrogen , 1972 .

[130]  M. Balog,et al.  Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I , 1972 .

[131]  V. L. Rideout.  An Improved Polishing Technique for GaAs , 1972 .

[132]  T. Kubota.  Effects of Substrate Temperature during RF-Sputtering of Silica on Optical and Chemical Properties, and Re-Emission Coefficient , 1972 .

[133]  R. Fair.  High Concentration Arsenic Diffusion in Silicon from a Doped Oxide Source , 1972 .

[134]  R. Gereth,et al.  Properties of Ammonia‐Free Nitrogen ‐ Si3 N 4 Films Produced at Low Temperatures , 1972 .

[135]  G. Rozgonyi,et al.  Dicing Induced Damage in GaP Electroluminescent Diodes , 1972 .

[136]  R. Meek,et al.  Anodic Dissolution and Selective Etching of Gallium Phosphide , 1972 .

[137]  J. Pankove.  Electrolytic Etching of GaN , 1972 .

[138]  J. Wong.  Vapor Deposition and Properties of Binary Arsenosilicate Glass Films , 1972 .

[139]  T. Kamins.  A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films , 1972 .

[140]  V. D. Wohlheiter,et al.  A High Production System for the Deposition of Silicon Nitride , 1972 .

[141]  L. D. Dyer.  HI‐H2 vapor etch for low temperature silicon epitaxial manufacturing , 1972 .

[142]  R. Dixon,et al.  A Scanning Electron Microscope Investigation of Etching Phenomena in GaP Electroluminescent Diodes , 1972 .

[143]  M. Graham,et al.  The Effect of Surface Preparation on the Oxidation of Nickel , 1972 .

[144]  K. J. Sladek,et al.  TiO2 Film Properties as a Function of Processing Temperature , 1972 .

[145]  T. Yashiro.  Some Properties of Vapor Deposited Ge3 N 4, Films and the Ge3 N 4 ‐ Ge Interface , 1972 .

[146]  R. C. Henderson.  Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study , 1972 .

[147]  C. Wen,et al.  Preferential Electrochemical Etching of P+ Silicon in an Aqueous HF ‐ H 2 SO 4 Electrolyte , 1972 .

[148]  J. Pringle.  A Very Precise Sectioning Method for Measuring Concentration Profiles in Anodic Tantalum Oxide , 1972 .

[149]  D. Bolon,et al.  Ultraviolet depolymerization of photoresist polymers , 1972 .

[150]  D. B. Holt,et al.  Jet Polishing of Semiconductors I . Automatic Jet Thinning of for Transmission Electron Microscopy , 1972 .

[151]  M. Theunissen,et al.  Etch Channel Formation during Anodic Dissolution of N‐Type Silicon in Aqueous Hydrofluoric Acid , 1972 .

[152]  A. R. Janus.  Chemical Etch Rate Studies on Sputtered Chromium Films , 1972 .

[153]  D. B. Holt,et al.  Jet Polishing of Semiconductors III . Polishing and Shaping of Si, Ge, GaAs, and Slices , 1972 .

[154]  J. W. Johnson,et al.  The Anodic Dissolution of Tungsten , 1971 .

[155]  G. Pedroli,et al.  Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in silicon , 1971 .

[156]  S. G. Parker,et al.  Revelation of Dislocations in ( Hg , Cd ) Te by an Etch Technique , 1971 .

[157]  J. Judge.  A Study of the Dissolution of SiO2 in Acidic Fluoride Solutions , 1971 .

[158]  A. Reisman,et al.  The Chemical Polishing of Sapphire and MgAl Spinel , 1971 .

[159]  H. Katto,et al.  Preparation and Properties of Aluminum Oxide Films Obtained by Glow Discharge Technique , 1971 .

[160]  W. Kern,et al.  Electrochemical Delineation of Tungsten Films for Microelectronic Devices , 1971 .

[161]  W. R. Cady,et al.  The P-channel refractory metal self-registered MOSFET , 1971 .

[162]  L. H. Hall.  Etch Rate Characterization of Silane Silicon Dioxide Films , 1971 .

[163]  J. W. Faust,et al.  The Influence of the Complexing Agent Concentration on the Etch Rate of Germanium , 1971 .

[164]  Tennyson Smith.  Sputter cleaning and etching of crystal surfaces (Ti, W, Si) monitored by Auger spectroscopy, ellipsometry and work function change , 1971 .

[165]  G. Rozgonyi,et al.  Evaluation of a New Polish for Gallium Arsenide Using a Peroxide‐Alkaline Solution , 1971 .

[166]  E. Taft.  Characterization of Silicon Nitride Films , 1971 .

[167]  T. Chu,et al.  Gallium Nitride Films , 1971 .

[168]  R. Meek.  Electrochemically Thinned N/N+ Epitaxial Silicon—Method and Applications , 1971 .

[169]  M. D. Coutts,et al.  Electron Microscope Characterization of Defects on Gaseous‐Etched Silicon Surfaces , 1971 .

[170]  W. Behl,et al.  Anodic oxidation of cobalt in potassium hydroxide electrolytes , 1971 .

[171]  A. C. Dumbri,et al.  Preparation and Properties of Pyrolytic Zirconium Dioxide Films , 1971 .

[172]  J. Macchesney,et al.  Chemical Vapor Deposition of Iron Oxide Films for Use as Semitransparent Masks , 1971 .

[173]  Kazuhiro Ito,et al.  Selective Etching of Gallium Arsenide Crystals in H 2 SO 4 ‐ H 2 O 2 ‐ H 2 O System , 1971 .

[174]  R. Castellano,et al.  Chemical Polish and Etch for Lithium, Sodium and Potassium , 1971 .

[175]  J. Dismukes,et al.  Gas‐Phase Etching of Silicon With Chlorine , 1971 .

[176]  R. Meek.  Anodic Dissolution of N+ Silicon , 1971 .

[177]  P. Bellin,et al.  Observation of Surface Defects in Electrolytically Etched Silicon by Infrared Microscopy , 1971 .

[178]  D. Brown,et al.  Glass Source Diffusion in Si and SiO2 , 1971 .

[179]  A. Bohg.  Ethylene Diamine‐Pyrocatechol‐Water Mixture Shows Etching Anomaly in Boron‐Doped Silicon , 1971 .

[180]  R. Schwenker.  Etch Rate Characterization of Borosilicate Glasses as Diffusion Sources , 1971 .

[181]  P. Rai-Choudhury.  Sulfur Hexafluoride as an Etchant for Silicon , 1971 .

[182]  A. El‐Hoshy.  Measurement of P‐Etch Rates for Boron‐Doped Glass Films , 1970 .

[183]  R. Bartlett,et al.  Surface Polarity and Etching of Beta‐Silicon Carbide , 1970 .

[184]  John R. Hollahan,et al.  Restoration of Optical Properties of Surfaces by Radiofrequency-Excited Oxygen , 1970 .

[185]  J. Gannon,et al.  Electrolytic Removal of P‐Type GaAs Substrates from Thin, N‐Type Semiconductor Layers , 1970 .

[186]  M. Theunissen,et al.  Application of Preferential Electrochemical Etching of Silicon to Semiconductor Device Technology , 1970 .

[187]  W. Kern,et al.  Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices I . Deposition Techniques , 1970 .

[188]  H. V. Dijk,et al.  Preparation of Thin Silicon Crystals by Electrochemical Thinning of Epitaxially Grown Structures , 1970 .

[189]  W. Kern,et al.  Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices II . Film Properties , 1970 .

[190]  R. Armstrong,et al.  The anodic dissolution of zinc in alkaline solutions , 1970 .

[191]  L. Chow,et al.  Vapor Phase Etching of GaAs in the H 2 ‐ H 2 O Flow System , 1970 .

[192]  Y. Okinaka,et al.  On the Oxidation‐Reduction Mechanism of the Cadmium Metal‐Cadmium Hydroxide Electrode , 1970 .

[193]  D. B. Lee.  Anisotropic Etching of Silicon , 1969 .

[194]  A. Riddiford,et al.  The anodic behaviour of cobalt in alkaline solutions , 1969 .

[195]  J. M. Eldridge,et al.  Phosphosilicate glass stabilization of FET devices , 1969 .

[196]  E. Mendel,et al.  Polishing of silicon by the cupric ion process , 1969 .

[197]  K. Bean,et al.  The influence of crystal orientation on silicon semiconductor processing , 1969 .

[198]  T. Chu,et al.  The Etching of Germanium with Water Vapor and Hydrogen Sulfide , 1969 .

[199]  Y. Kuwano.  Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and Nitrogen , 1969 .

[200]  B. Pruniaux,et al.  Preliminary investigations of Reactively Evaporated Aluminum Oxide Films on Silicon , 1969 .

[201]  M. Breiter,et al.  The Anodic Dissolution and Passivation of Zinc in Concentrated Potassium Hydroxide Solutions , 1969 .

[202]  W. Strehlow.  Chemical Polishing of II‐VI Compounds , 1969 .

[203]  B. H. Hill.  Effect of Kilovolt Electrons on the Etch Rate of Al2 O 3 and Ta2 O 5 , 1969 .

[204]  D. S. Herman,et al.  A New Etchant for Thin Films of Tantalum and Tantalum Compounds , 1969 .

[205]  P. Rai-Choudhury,et al.  Hydrogen Sulfide as an Etchant for Silicon , 1969 .

[206]  W. Hoffmeister,et al.  Determination of the etch rate of silicon in buffered HF using a 31Si tracer method , 1969 .

[207]  R. H. Saul.  The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition , 1968 .

[208]  J. Faust,et al.  Etchants for ZnSe , 1968 .

[209]  H. Nagai,et al.  Preparation and Properties of Amorphous Germanium Nitride Films , 1968 .

[210]  D. D. Wit,et al.  The Anodic Behavior of Zinc in KOH Solutions , 1968 .

[211]  Michael Hatzakis,et al.  High-resolution positive resists for electron-beam exposure , 1968 .

[212]  M. Rand,et al.  Preparation and Properties of Thin Film Boron Nitride , 1968 .

[213]  B. E. Deal,et al.  Electrical Properties of Vapor‐Deposited Silicon Nitride and Silicon Oxide Films on Silicon , 1968 .

[214]  H. Philipp,et al.  Properties of Si x O y N z Films on Si , 1968 .

[215]  T. O’Keeffe,et al.  Fabrication of planar silicon transistors without photoresist , 1968 .

[216]  J. Kraitchman.  Silicon Oxide Films Grown in a Microwave Discharge , 1967 .

[217]  K. Löcherer,et al.  Activation Energies in the Chemical Etching of Semiconductors in HNO 3 ‐ HF ‐ CH 3 COOH , 1967 .

[218]  J. A. Aboaf,et al.  Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide , 1967 .

[219]  R. Finne,et al.  A Water‐Amine‐Complexing Agent System for Etching Silicon , 1967 .

[220]  W. V. Gelder,et al.  The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask , 1967 .

[221]  W. Engeler,et al.  A New Masking Technique for Semiconductor Processing , 1967 .

[222]  L. I. Maissel,et al.  Properties of insulating thin films deposited by RF sputtering , 1967 .

[223]  R. W. Brander,et al.  The etching of a-silicon carbide , 1967 .

[224]  W. A. Pliskin.  Fused Glass Penetration into Thermally Grown Silicon Dioxide Films , 1967 .

[225]  S. M. Hu,et al.  Observation of Etching of n‐Type Silicon in Aqueous HF Solutions , 1967 .

[226]  W. Oldham,et al.  The Growth and Etching of Si through Windows in SiO2 , 1967 .

[227]  J. Kraitchman,et al.  Anodic Oxide Growth Behavior on Silicon , 1967 .

[228]  B. Schwartz.  Chemical Etching of Germanium in the System HF ‐ H 2 O 2 ‐ H 2 O , 1967 .

[229]  M. V. Sullivan,et al.  Chemical Polishing of Cadmium Sulfide , 1967 .

[230]  M. Rand.  A Nitric Oxide Process for the Deposition of Silica Films , 1967 .

[231]  W. A. Pliskin.  The evaluation of thin film insulators , 1967 .

[232]  N. Goldsmith,et al.  Nondestructive Determination of Thickness and Perfection of Silica Films , 1966 .

[233]  J. E. Snell,et al.  A vapour etching technique for the photolithography of silicon dioxide , 1966 .

[234]  K. Brack,et al.  Preparation of GaAs Specimens for Transmission Electron Microscopy , 1966 .

[235]  A. Rogel.  Durable Chromium Masks for Photoresist Applications , 1966 .

[236]  D. Shaw.  Enhanced GaAs Etch Rates Near the Edges of a Protective Mask , 1966 .

[237]  B. L. Sharma.  Chemical etchants for InAs , 1966 .

[238]  R. Frieser.  Phase Changes in Thin Reactively Sputtered Alumina Films , 1966 .

[239]  E. H. Snow,et al.  Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon , 1966 .

[240]  R. Memming,et al.  Anodic dissolution of silicon in hydrofluoric acid solutions , 1966 .

[241]  T. Chu,et al.  In Situ Etching of Silicon Substrates Prior to Epitaxial Growth , 1966 .

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