GaN Device Technology: Manufacturing, Characterization, Modelling and Verification
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F. Giannini | V. Camarchia | G. Ghione | M. Pirola | W. Ciccognani | A. Serino | C. Lanzieri | P.E. Longhi | M. Peroni | E. Limit | M.A. Nanni | P. Romanini
[1] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[2] J. F. Vidalou,et al. On-wafer large signal pulsed measurements , 1989, IEEE MTT-S International Microwave Symposium Digest.
[3] M. Paggi,et al. Nonlinear GaAs MESFET modeling using pulsed gate measurements , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.
[4] Peter Ladbrooke,et al. The importance of the current-voltage characteristics of FETs, HEMTs and bipolar transistors in contemporary circuit design , 2002 .
[5] Rodney S. Tucker,et al. Computer-Aided Error Correction of Large-Signal Load-Pull Measurements , 1984 .
[6] Andrea Pierenrico Ferrero,et al. An improved calibration technique for on-wafer large-signal transistor characterization , 1993 .
[7] A. Platzker,et al. Characterization of GaAs devices by a versatile pulsed I-V measurement system , 1990, IEEE International Digest on Microwave Symposium.
[8] I. Hecht. Improved Error-Correction Technique for Large-Signal Load-Pull Measurements (Short Paper) , 1987 .
[9] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .