The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers
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[1] M. Pilkuhn,et al. Temperature dependence of optical gain spectra in GaInAsP/InP double‐heterostructure lasers , 1981 .
[2] G. Henshall,et al. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers , 1980 .
[3] Minoru Yamada,et al. Analysis of gain suppression in undoped injection lasers , 1981 .
[4] M. Takusagawa,et al. Temperature characteristics of threshold current in InGaAsP/InP double‐heterostructure lasers , 1980 .
[5] Masahiro Asada,et al. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption , 1980 .
[6] Y. Sakakibara,et al. Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3 µm) Laser , 1982 .
[7] Masahiro Asada,et al. Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 µm Wavelength InGaAsP/InP Lasers , 1981 .
[8] T. Ikegami,et al. Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasers , 1972 .
[9] R. Lang,et al. Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity , 1981 .
[10] T. Tanbun-ek,et al. 1.6 µm wavelength GaInAsP/InP BH lasers , 1981, IEEE Journal of Quantum Electronics.
[11] N. Dutta,et al. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination , 1981 .
[12] 1.6 µm wavelength GaInAsP/InP lasers prepared by two-phase solution technique , 1981, IEEE Journal of Quantum Electronics.
[13] A. Sugimura,et al. Band-to-band Auger recombination effect on InGaAsP laser threshold , 1981 .
[14] M. Asada,et al. The temperature dependence of the threshold current of GaInAsP/InP DH lasers , 1981, IEEE Journal of Quantum Electronics.
[15] Y. Horikoshi,et al. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers , 1979 .
[16] M. Asada,et al. Measurement of spontaneous emission efficiency and nonradiative recombinations in 1.58‐μm wavelength GaInAsP/InP crystals , 1982 .
[17] K Furuya,et al. Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser. , 1978, Applied optics.
[18] B. Hakki,et al. Gain spectra in GaAs double−heterostructure injection lasers , 1975 .