Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory
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[1] W. G. Spitzer,et al. The mechanisms for silicon oxidation in steam and oxygen , 1960 .
[2] W. Tiller. On the Kinetics of the Thermal Oxidation of Silicon II . Some Theoretical Evaluations , 1980 .
[3] R. Fair,et al. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation , 1978 .
[4] Bruce E. Deal,et al. Kinetics of High Pressure Oxidation of Silicon in Pyrogenic Steam , 1981 .
[5] R. E. Tressler,et al. Isotope Labeling Studies of the Oxidation of Silicon at 1000° and 1300°C , 1984 .
[6] James D. Plummer,et al. Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels II . Comparison with Experiment and Discussion , 1979 .
[7] H. Higuchi,et al. Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si , 1983 .
[8] R. Fair. On the role of self‐interstitials in impurity diffusion in silicon , 1980 .
[9] Shyam P. Murarka,et al. Oxidation induced stacking faults in n‐ and p‐type (100) silicon , 1977 .
[10] S. Hu. Anomalous temperature effect of oxidation stacking faults in silicon , 1975 .
[11] K. V. Anand,et al. Orientation dependence of the diffusion of boron in silicon , 1971 .
[12] H. Shiraki. Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation , 1976 .
[13] R. Dutton,et al. Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon , 1983 .
[14] Joseph Blanc,et al. A revised model for the oxidation of Si by oxygen , 1978 .
[15] U. Gösele,et al. Growth kinetics of oxidation‐induced stacking faults in silicon: A new concept , 1981 .
[16] G. Masetti,et al. On phosphorus diffusion in silicon under oxidizing atmospheres , 1973 .
[17] A. S. Grove,et al. General Relationship for the Thermal Oxidation of Silicon , 1965 .
[18] Hitoshi Tanaka,et al. The Enhanced Diffusion of Arsenic and Phosphorus in Silicon by Thermal Oxidation , 1982 .
[19] Robert W. Dutton,et al. Oxidation‐enhanced diffusion of arsenic and phosphorus in near‐intrinsic 〈100〉 silicon , 1978 .
[20] William A. Tiller,et al. On the Kinetics of the Thermal Oxidation of Silicon III . Coupling with Other Key Phenomena , 1981 .
[21] Augustin Martinez,et al. Boron segregation at Si‐SiO2 interface during neutral anneals , 1984 .
[22] G. N. Wills. The orientation dependent diffusion of boron in silicon under oxidizing conditions , 1969 .
[23] Robert W. Dutton,et al. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon , 1981 .
[24] Bruce E. Deal,et al. High Pressure Oxidation of Silicon in Dry Oxygen , 1982 .
[25] L. Pauling. The Nature Of The Chemical Bond , 1939 .
[26] Kenji Taniguchi,et al. Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) Silicon , 1980 .
[27] Y. J. von der Meulen,et al. Kinetics of Thermal Growth of Ultra‐Thin Layers of SiO2 on Silicon I . Experiment , 1972 .
[28] S. M. Hu,et al. Formation of stacking faults and enhanced diffusion in the oxidation of silicon , 1974 .
[29] Hisayuki Higuchi,et al. Retardation of Sb Diffusion in Si during Thermal Oxidation , 1981 .
[30] E. Rosencher,et al. An 18O study of the thermal oxidation of silicon in oxygen , 1979 .
[31] Y. J. V. D. Meulen,et al. Kinetics of Thermal Growth of Ultra‐Thin Layers of SiO2 on Silicon Part II . Theory , 1972 .
[32] William A. Tiller,et al. On the Kinetics of the Thermal Oxidation of Silicon I . A Theoretical Perspective , 1980 .
[33] P. Dobson,et al. The mechanism of impurity diffusion in silicon , 1972 .
[34] James D. Plummer,et al. Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment , 1986 .
[35] James D. Plummer,et al. Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels I . Theory , 1979 .
[36] P. Dobson,et al. The effect of oxidation on anomalous diffusion in silicon , 1971 .
[37] Ulrich Gösele,et al. On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon , 1983 .
[38] Robert W. Dutton,et al. The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon , 1981 .
[39] Robert W. Dutton,et al. Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation , 1978 .
[40] A. J. Moulson,et al. Water in silica glass , 1961 .
[41] Dimitri A. Antoniadis,et al. Oxidation‐Induced Point Defects in Silicon , 1982 .
[42] W. Tiller,et al. Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation , 1984 .
[43] Paul J. Jorgensen,et al. Effect of an Electric Field on Silicon Oxidation , 1962 .