论文信息 - NASDAC - A new simulation tool for the electro-thermal analysis of bipolar devices: application to multi-finger AlGaAs/GaAs HBT's

NASDAC - A new simulation tool for the electro-thermal analysis of bipolar devices: application to multi-finger AlGaAs/GaAs HBT's

In this paper a new simulation tool is presented, suitable to describe the electro-thermal behavior in multi-finger AlGaAs/GaAs devices. The program is based on a new analytical formulation to compute the device temperature distribution both for the steady-state and the transient case and incorporates an accurate electro-thermal physically-based model for the elementary transistor. The effect of the geometry of heat dissipating regions is accounted for. Thermal conductivity dependence on temperature and de-biasing effects across metallization layers are also included. Hence the simulator can be efficaciously used to enhance the thermal chip design, by means of illustrative comparisons between different structures.

V. d'Alessandro | N. Rinaldi | M. Macchiaroli

[1] E. S. Schlig,et al. Thermal properties of very fast transistors , 1970 .

[2] S. Nelson,et al. Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities , 1993 .

[3] Niccolò Rinaldi. Thermal analysis of solid-state devices and circuits: an analytical approach , 2000 .

[4] H. Morkoç,et al. Thermal design studies of high-power heterojunction bipolar transistors , 1989 .

[5] Paul-Alain Rolland,et al. Transient analysis of collector current collapse in multifinger HBT's , 1998 .

[6] Wen-Chau Liu,et al. The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling , 1994 .

[7] A. Napieralski,et al. A new approach to thermal analysis of power devices , 1987, IEEE Transactions on Electron Devices.