论文信息 - An investigation of the voltage sustained by epitaxial bipolar transistors in current mode second breakdown

An investigation of the voltage sustained by epitaxial bipolar transistors in current mode second breakdown

Calculations of the voltage sustained by epitaxial bipolar transistors whilst in current mode second breakdown are presented and compared with experimental measurements. The results of the analysis show that the impurity profile at the epitax-substrate interface can have a significant effect on the sustaining voltage. Calculations based on measurements of typical impurity profiles found in practical devices are consistent with the sustaining voltages observed. In addition, discontinuities appearing in the I/V characteristics of transistors in current mode second breakdown have been investigated.

K. I. Nuttall | I. Dunn

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