35 GHZ PSEUDOHORPHIC EElpT HIC PO= AHPLIFIERl

vm gate-length double-heterojunction InGaAs Pseudomorphic HEMTs developed at the GE Electronics Laboratory have been integrated into a 3-stage power amplifier MMIC designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gain of 30 dB, minimum output power of 200 mW with 20 dB associated gain, power-added efficiency of greater than 18% and a return loss of greater than 14 dB over the entire band. This performance was measured with the MMIC operating from a single 6 Volt DC supply.