Control of nitrogen profile in radical nitridation of SiO2 films.

Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan. Phone: +81-6-6497-7545 E-mail: kawase.kazumasa@wrc.melco.co.jp Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renesas Technology Corporation, 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan. 3 Department of Electronic Engineering, Graduate School of Engineering, Tohoku Univ., Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan. New Industry Creation Hatchery Center, Tohoku Univ., Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.