Ambient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors

Monolayer materials are sensitive to their environment because all of the atoms are at their surface. We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS2 by monitoring electrical parameters of MoS2 field-effect transistors as their environment is changed from atmosphere to high vacuum. The mobility increases and contact resistance decreases simultaneously as either the pressure is reduced or the sample is annealed in vacuum. We see a previously unobserved, non-monotonic change in threshold voltage with decreasing pressure. This result could be explained by charge transfer on the MoS2 channel and Schottky contact formation due to adsorbates at the interface between the gold contacts and MoS2. Additionally, from our electrical measurements it is plausible to infer that at room temperature and pressure water and oxygen molecules adsorbed on the surface act as interface traps and scattering centers with a density of several 1012 cm−2 eV−1, degrading the electrical properties of monolayer MoS2.

[1]  Dieter K. Schroder,et al.  Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition , 2005 .

[2]  Y. Shimazu,et al.  Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors , 2016, Scientific Reports.

[3]  Woong-Ki Hong,et al.  Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors. , 2013, ACS nano.

[4]  Takhee Lee,et al.  Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors , 2013, Nanotechnology.

[5]  P. Ajayan,et al.  Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation. , 2015, Nano letters.

[6]  Madan Dubey,et al.  Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition , 2013 .

[7]  Kazuhito Tsukagoshi,et al.  Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. , 2016, Chemical Society reviews.

[8]  Oriol López Sánchez,et al.  Large-Area Epitaxial Monolayer MoS2 , 2015, ACS nano.

[9]  Xu Cui,et al.  Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. , 2013, ACS nano.

[10]  Chongwu Zhou,et al.  High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors. , 2014, ACS nano.

[11]  Hua Zhang,et al.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. , 2013, Nature chemistry.

[12]  Jing Kong,et al.  Intrinsic structural defects in monolayer molybdenum disulfide. , 2013, Nano letters.

[13]  Pablo Jarillo-Herrero,et al.  Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. , 2013, Nano letters.

[14]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[15]  S. Davis,et al.  Oxygen chemisorption at defect sites in MoS2 and ReS2 basal plane surfaces , 1984 .

[16]  Rajeev Kumar,et al.  Transport properties of monolayer MoS2 grown by chemical vapor deposition. , 2014, Nano letters.

[17]  Andras Kis,et al.  Ultrasensitive photodetectors based on monolayer MoS2. , 2013, Nature nanotechnology.

[18]  Baoshun Zhang,et al.  Scaling behavior of hysteresis in multilayer MoS2 field effect transistors , 2014 .

[19]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[20]  Hugen Yan,et al.  Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.

[21]  Eric Pop,et al.  Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. , 2016, Nano letters.

[22]  Yun Hee Jang,et al.  Layer-controlled CVD growth of large-area two-dimensional MoS2 films. , 2015, Nanoscale.

[23]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[24]  Yu Zeng,et al.  Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs , 2002 .

[25]  Xinran Wang,et al.  Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances , 2012 .

[26]  Youngki Yoon,et al.  How good can monolayer MoS₂ transistors be? , 2011, Nano letters.

[27]  Bin Liu,et al.  Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.

[28]  P M Campbell,et al.  Chemical vapor sensing with monolayer MoS2. , 2013, Nano letters.

[29]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[30]  D. Schroder Semiconductor Material and Device Characterization , 1990 .

[31]  Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors , 2013, 1304.5567.

[32]  J. Grossman,et al.  Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. , 2013, Nano letters.

[33]  Gang Hee Han,et al.  Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations , 2015, Nature Communications.