Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers
暂无分享,去创建一个
Qingchun Zhang | J. Richmond | B. Hull | J. Richmond | A. Hefner | J. Sumakeris | A. Powell | M. O'loughlin | Qingchun Zhang | K. Hobart | E. Imhoff | A. Rivera-López | K.D. Hobart | B.A. Hull | A.R. Hefner | J.J. Sumakeris | M.J. O'Loughlin | A.R. Powell | E.A. Imhoff | A. Rivera-Lopez
[1] B Jayantbaliga. Power semiconductor devices for the 1990s , 1993 .
[2] H. Bleichner,et al. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects , 2002 .
[3] T. Urushidani,et al. High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances , 1993, IEEE Electron Device Letters.
[4] Carl-Mikael Zetterling,et al. A 2.8kV, Forward Drop JBS Diode with Low Leakage , 2000 .
[5] Krishna Shenai,et al. Optimum semiconductors for high-power electronics , 1989 .
[6] E. Sakuma,et al. Schottky barrier diodes on 3C‐SiC , 1985 .
[7] S. H. Hagen. Surface‐Barrier Diodes on Silicon Carbide , 1968 .
[8] P. Alexandrov,et al. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes , 2003, IEEE Electron Device Letters.
[9] M. Melloch,et al. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers , 1998 .
[10] J. Waldrop,et al. Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence , 1993 .
[11] B. J. Baliga,et al. The pinch rectifier: A low-forward-drop high-speed power diode , 1984, IEEE Electron Device Letters.
[12] B. J. Baliga,et al. Silicon-carbide high-voltage (400 V) Schottky barrier diodes , 1992, IEEE Electron Device Letters.
[13] A. Ellison,et al. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes , 2000 .
[14] R. Raghunathan,et al. High voltage 4H-SiC Schottky barrier diodes , 1995, IEEE Electron Device Letters.
[15] A. Agarwal,et al. 10 kV, 5A 4H-SiC Power DMOSFET , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
[16] Steven T. Peake,et al. Power semiconductor devices , 1995 .
[17] Roland Rupp,et al. A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications , 2006 .
[18] Miquel Vellvehi,et al. Reliability Aspects of High Voltage 4H-SiC JBS Diodes , 2008 .
[19] Tsunenobu Kimoto,et al. Performance limiting surface defects in SiC epitaxial p-n junction diodes , 1999 .
[20] B. Hull,et al. Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers , 2008 .
[21] C. Zetterling,et al. Junction barrier Schottky diodes in 6H SiC , 1998 .
[22] John W. Palmour,et al. Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications , 2007 .
[23] T. Kimoto,et al. High performance of high-voltage 4H-SiC Schottky barrier diodes , 1995, IEEE Electron Device Letters.
[24] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.