High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SBT: Schottky barrier transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi/sub 2/ process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.