III‐V concentrator solar cell reliability prediction based on quantitative LED reliability data

III-V Multi Junction (MJ) solar cells based on Light Emitting Diode (LED) technology have been proposed and developed in recent years as a way of producing cost-competitive photovoltaic electricity. As LEDs are similar to solar cells in terms of material, size and power, it is possible to take advantage of the huge technological experience accumulated in the former and apply it to the latter. This paper analyses the most important parameters that affect the operational lifetime of the device (crystalline quality, temperature, current density, humidity and photodegradation), taking into account experience on the reliability of LEDs. Most of these parameters are less stressed for a III-VMJ solar cell working at 1000 suns than for a high-power LED. From this analysis, some recommendations are extracted for improving the long-term reliability of the solar cells. Compared to high-power LEDs based on compound semiconductors, it is possible to achieve operational lifetimes higher than 10 5 hours (34 years of real-time operation) for III-V high-concentration solar cells.

[1]  Large-area infrared-emitting diodes with an output optical power greater than 1 W , 1998, IEEE Photonics Technology Letters.

[2]  Andreas W. Bett,et al.  Degradation study of III–V solar cells for concentrator applications , 2005 .

[3]  Antonio Luque,et al.  High efficiency and high concentration in photovoltaics , 1999 .

[4]  L. Peternai,et al.  Advanced light emitting diodes structures for optoelectronic applications , 2003 .

[5]  B. Galiana,et al.  Strategic Options for a Led-Like Approach in III-V Concentrator Photovoltaics , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

[6]  A. Luque,et al.  Handbook of Photovoltaic Science and Engineering: Luque/Photovoltaic Science and Engineering , 2005 .

[7]  M. Symko-Davies,et al.  Multijunction Photovoltaic Technologies for High-Performance Concentrators , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

[8]  M. Kauer,et al.  High-power InGaN light emitting diodes grown by molecular beam epitaxy , 2004 .

[9]  M. Gaidis,et al.  Effects of Humidity on Non-Hermetically Packaged III-V Structures and Devices , 1999 .

[10]  Carlos Algora,et al.  High‐irradiance degradation tests on concentrator GaAs solar cells , 2003 .

[11]  Eugene E. Haller,et al.  Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system , 2003 .

[12]  Frank Dimroth,et al.  Metamorphic GayIn1−yP/Ga1−xInxAs tandem solar cells for space and for terrestrial concentrator applications at C > 1000 suns , 2001 .

[13]  M. Fukuda.  Laser and LED reliability update , 1988 .

[14]  Burhan Bayraktaroglu,et al.  InGaP Makes HBT Reliability a Non-Issue , 2001 .

[15]  Michael R. Krames,et al.  High Power LEDs – Technology Status and Market Applications , 2002 .

[16]  J.Y. Tsao,et al.  Solid-state lighting: lamps, chips and materials for tomorrow , 2005, (CLEO). Conference on Lasers and Electro-Optics, 2005..

[17]  Jean Paul Freyssinier,et al.  Solid-state lighting: failure analysis of white LEDs , 2004 .

[18]  5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates , 2001 .

[19]  Laurent Bechou,et al.  Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests , 2005 .

[20]  Carlos Algora,et al.  A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns , 2001 .

[21]  Dana Crowe,et al.  Design for Reliability , 2001 .

[22]  Paul S. Martin,et al.  Illumination with solid state lighting technology , 2002 .

[23]  S. van Riesen,et al.  Accelerated ageing tests on III-V solar cells , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[24]  Sarah R. Kurtz,et al.  1-eV solar cells with GaInNAs active layer , 1998 .