Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
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Min Kyu Kim | David Thompson | Hyungjun Kim | W. Maeng | W. Kim | A. Noori | J. Gatineau | C. Dussarrat | V. Pallem | S. ChuSchubert
[1] J. Myoung,et al. Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition , 2010 .
[2] W. Maeng,et al. Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide , 2010 .
[3] J. S. Wrench,et al. MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor , 2009 .
[4] Han-Bo-Ram Lee,et al. Applications of atomic layer deposition to nanofabrication and emerging nanodevices , 2009 .
[5] C. Park,et al. Spontaneous formation of vertical magnetic-metal-nanorod arrays during plasma-enhanced atomic layer deposition. , 2008, Small.
[6] Paul R. Chalker,et al. Permittivity enhancement of hafnium dioxide high-κ films by cerium doping , 2008 .
[7] F. Chiu. Current Conduction Mechanisms in CeO2 Thin Films , 2008 .
[8] J. Lee,et al. Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric , 2008 .
[9] Jun Du,et al. Epitaxial growth of HfO2 doped CeO2 thin films on Si(001) substrates for high-κ application , 2008 .
[10] J. Son,et al. Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition , 2008, Nanotechnology.
[11] D. Starodub,et al. A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100) , 2006 .
[12] W. Maeng,et al. Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors , 2006 .
[13] I. Fragalà,et al. Morphological and structural control of nanostructured oriented CeO2 films grown on random metallic substrates , 2005 .
[14] D. Barreca,et al. Nanostructure and optical properties of CeO 2 thin films obtained by plasma-enhanced chemical vapor deposition , 2003 .
[15] Hyungjun Kim,et al. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing , 2003 .
[16] M. Putkonen,et al. Cerium dioxide buffer layers at low temperature by atomic layer deposition , 2002 .
[17] J. Kenny,et al. Structural, morphological, and mechanical properties of plasma deposited hydrogenated amorphous carbon thin films: Ar gas dilution effects , 2001 .
[18] J. Ku,et al. A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications , 2001 .
[19] Guojia Fang,et al. Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gel thin films , 2000 .
[20] Chong-Yun Park,et al. Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f.-magnetron sputtering , 2000 .
[21] S. Overbury,et al. Electron spectroscopy of single crystal and polycrystalline cerium oxide surfaces , 1998 .
[22] H. Arwin,et al. A spectroscopic ellipsometry study of cerium dioxide thin films grown on sapphire by rf magnetron sputtering , 1995 .
[23] J. Qiao. High-Tc superconductors on buffered silicon: materials properties and device applications , 1995 .
[24] Salah M. Bedair,et al. ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111) , 1994 .
[25] P. Wahid,et al. Cerium dioxide thin film optical waveguides , 1992 .
[26] J. Sun,et al. Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon , 1984 .
[27] Z. Hassan,et al. Effects of Postdeposition Annealing in Argon Ambient on Metallorganic Decomposed CeO2 Gate Spin Coated on Silicon , 2010 .
[28] B. Steele. Materials for electrochemical energy conversion and storage systems , 1993 .