Self‐calibration of semiconductor photodiodes in the soft x‐ray region
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[1] J. Geist,et al. Quantum efficiency stability of silicon photodiodes. , 1987, Applied optics.
[2] B. L. Henke,et al. The characterization of x‐ray photocathodes in the 0.1–10‐keV photon energy region , 1981 .
[3] Franz Schäfers,et al. Schottky type photodiodes as detectors in the VUV and soft x-ray range. , 1988, Applied optics.
[4] T. Kobayashi. Average energy to form electron‐hole pairs in GaP diodes with alpha particles , 1972 .
[5] T. J. Tanaka,et al. Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflection: E = 100–2000 eV Z = 1–94☆ , 1982 .
[6] Gerhard Ulm,et al. Calibration of semiconductor photodiodes as soft x‐ray detectors , 1989 .
[7] D. A. Landis,et al. Accurate determination of the ionization energy in semiconductor detectors , 1968 .
[8] J. Geist,et al. Silicon photodiode absolute spectral response self-calibration. , 1980, Applied optics.
[9] Hans Bichsel,et al. Straggling in thin silicon detectors , 1988 .
[10] U. Kroth,et al. Quantum efficiency of a semiconductor photodiode in the VUV determined by comparison with a proportional counter in monochromatized synchrotron radiation. , 1990, Applied optics.
[11] Daniel Seligson,et al. Soft X-ray dosimetry and its application on the lithography beamline at SSRL , 1988 .
[12] W. Veigele,et al. Photon cross sections from 0.1 keV to 1 MeV for elements Z = 1 to Z = 94* , 1973 .
[13] M. Krumrey,et al. Semiconductor photodiodes in the VUV: Determination of layer thicknesses and design criteria for improved devices , 1990 .
[14] A. Milnes,et al. Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals , 1979 .
[15] R. Korde,et al. Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet. , 1989, Applied optics.
[16] M. Krumrey,et al. Stability of semiconductor photodiodes as VUV detectors , 1989 .
[17] A. Tanaka,et al. Measurement of optical-absorption coefficient and minority carrier diffusion length in GaAs1-xPx Schottky-barrier photodiodes , 1988 .
[18] David J. Nagel,et al. Photoelectric quantum efficiencies and filter window absorption coefficients from 20 eV to 10 KeV , 1981 .
[19] C. W. Struck,et al. Scattering by ionization and phonon emission in semiconductors , 1980 .
[20] B. Goldstein. Electron‐Hole Pair Creation in Gallium Phosphide by α Particles , 1965 .