Fundamentals of light emission from silicon devices

The fundamentals of light-emitting phenomena from silicon semiconducting material are presented from an experimental rather than a theoretical point of view. The following aspects are considered in detail. In the first place, laterally resolved measurements give information about the distribution of emitted light, which has been generated by an excited radiative system. Secondly, spectrally resolved experiments enable a distinction to be made between different current transport mechanisms and permit discussion of underlying physical concepts. Thirdly, some fundamental emission mechanisms are discussed on the basis of the dependency of the electroluminescence intensity on such external parameters as temperature and current. Finally, the applicability of these mechanisms with respect to reliability physics, design verification and failure analysis of semiconducting devices is outlined and the state of the art of emission microscopy is reviewed.

[1]  Ajith Amerasekera,et al.  Photon emission as a tool for ESD failure localization and as a technique for studying ESD phenomena , 1991 .

[2]  Neeraj Khurana,et al.  Dynamic Imaging of Current Conduction in Dielectric Films by Emission Microscopy , 1987, 25th International Reliability Physics Symposium.

[3]  A. G. Chynoweth,et al.  Effect of Dislocations on Breakdown in Silicon p-n Junctions , 1958 .

[4]  R. A. Stuart,et al.  Evidence of optical generation of minority carriers from saturated MOS transistors , 1983 .

[5]  A. Goetzberger,et al.  Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions , 1963 .

[6]  W. Shockley,et al.  Photon-Radiative Recombination of Electrons and Holes in Germanium , 1954 .

[7]  B. M. Arora,et al.  Luminescence spectra of an n‐channel metal‐oxide‐semiconductor field‐effect transistor at breakdown , 1990 .

[8]  G. Leising.  Großflächige Leuchtdioden aus Polymeren?: Ein vergleichender Bericht über den aktuellen Stand der Elektrolumineszenz‐Forschung mit verschiedenen Materialien , 1993 .

[9]  A. Toriumi.  Experimental study of hot carriers in small size Si-MOSFETs , 1989 .

[10]  Peter Seitz,et al.  Light-emitting devices in industrial CMOS technology , 1993 .

[11]  W. Haecker,et al.  Infrared radiation from breakdown plasmas in Si, GaSb, and Ge: Evidence for direct free hole radiation , 1974 .

[12]  M. Lenzlinger,et al.  Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[14]  R. Newman,et al.  Visible Light from a Silicon p − n Junction , 1955 .

[15]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[16]  Thomas N. Theis,et al.  Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films , 1985 .

[17]  Alessandro Paccagnella,et al.  Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa) , 1991 .

[18]  C. Boit,et al.  Discrimination of parasitic bipolar operating modes in ICs with emission microscopy , 1990, 28th Annual Proceedings on Reliability Physics Symposium.

[19]  Kirtley,et al.  Theory of high-field electron transport in silicon dioxide. , 1985, Physical review. B, Condensed matter.

[20]  Paul M. Solomon,et al.  Direct measurement of the energy distribution of hot electrons in silicon dioxide , 1985 .

[21]  M. Stucchi,et al.  Infra-red microscopy direct observation of current redistribution and SPICE simulation of latch-up I/V hysteresis effects , 1989 .

[22]  J. Soden,et al.  The use of light emission in failure analysis of CMOS ICs , 1990 .

[23]  P. A. Wolff,et al.  Theory of optical radiation from breakdown avalanches in germanium , 1960 .

[24]  F. Koch,et al.  Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices , 1988 .

[25]  B. Riccò,et al.  Extended (1.1-2.9 eV) hot-carrier induced photon emission in n-channel MOSFETs , 1990, International Technical Digest on Electron Devices.

[26]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[27]  M. Kikuchi.  Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction : II. Classification of weak spots in diffused p-n junctions , 1960 .

[28]  H. Cerva,et al.  Implantation Defects Below Mask Edges in Silicon Structure and Effect on Devices , 1993 .

[29]  S. Nakajima,et al.  Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's , 1985, IEEE Transactions on Electron Devices.

[30]  Evaluation of hot carrier effects in TFT by emission microscopy , 1992, 30th Annual Proceedings Reliability Physics 1992.

[31]  Chenming Hu,et al.  Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's , 1984, IEEE Transactions on Electron Devices.

[32]  Y. Uraoka,et al.  Evaluation technology of VLSI reliability using hot carrier luminescence , 1991 .

[33]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[34]  Volker Lehmann,et al.  Porous silicon formation: A quantum wire effect , 1991 .

[35]  D. M. Eagles.  Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band , 1960 .

[36]  F. Kozlowski,et al.  Current-induced light emission from a porous silicon device , 1991, IEEE Electron Device Letters.

[37]  E. Kamieniecki.  Hot Carriers in Microplasmas and their Radiation in Germanium and Silicon , 1964, September 1.

[38]  N. Klein,et al.  Electroluminescence at high fields in silicon dioxide , 1976 .

[39]  A. Mooradian,et al.  Recombination Emission in InSb , 1966 .

[40]  S.-C. Lim,et al.  Detection of junction spiking and its induced latch-up by emission microscopy , 1988 .

[41]  C. Hu,et al.  Photon generation in forward-biased silicon p-n junctions , 1983, IEEE Electron Device Letters.

[42]  Christian Boit,et al.  Quantitative emission microscopy , 1992 .

[43]  Y. Uraoka,et al.  New detection method of hot-carrier degradation using photon spectrum analysis of weak luminescence on CMOS VLSI , 1990, International Conference on Microelectronic Test Structures.

[44]  A. Paccagnella,et al.  Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers , 1990, IEEE Electron Device Letters.

[45]  Neeraj Khurana,et al.  Pulsed Infra-Red Microscopy for Debugging Latch-Up on CMOS Products , 1984, 22nd International Reliability Physics Symposium.

[46]  Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects , 1985, 1985 International Electron Devices Meeting.

[47]  N. Khurana,et al.  ESD on CHMOS Devices - Equivalent Circuits, Physical Models and Failure Mechanisms , 1985, 23rd International Reliability Physics Symposium.

[48]  K. Penner.  Electroluminescence from Silicon Devices -A Tool for Device and Material Characterization , 1988, European Solid-State Device Research Conference.

[49]  R. Yamamoto,et al.  Light emission and burnout characteristics of GaAs power MESFET's , 1978, IEEE Transactions on Electron Devices.

[50]  Y. Uraoka,et al.  Evaluation of gate oxide reliability using luminescence method , 1990, Proceedings of the 1991 International Conference on Microelectronic Test Structures.

[51]  A. G. Chynoweth,et al.  Photon Emission from Avalanche Breakdown in Silicon , 1956 .

[52]  C. Werner,et al.  Hot-electron and hole-emission effects in short n-channel MOSFET's , 1985, IEEE Transactions on Electron Devices.

[53]  J. Shewchun,et al.  Mechanism for reverse-biased breakdown radiation in p-n junctions , 1965 .

[54]  H. Gummel,et al.  Photon emission from avalanche breakdown in germanium p-n junctions , 1960 .

[55]  J. R. Haynes,et al.  Analysis of intrinsic recombination radiation from silicon and germanium , 1959 .

[56]  Georg Antonin,et al.  Electrical Characterization of Megabit DRAMs, Part 1: External Testing , 1991, IEEE Des. Test Comput..

[57]  Light emission from hot carriers in Si MOSFETS , 1992 .

[58]  R. Muller,et al.  Spatially resolved observation of visible-light emission from Si MOSFET's , 1983, IEEE Electron Device Letters.

[59]  A. Toriumi,et al.  A study of photon emission from n-channel MOSFET's , 1987, IEEE Transactions on Electron Devices.

[60]  N. Khurana,et al.  Imaging and detection of current conduction in dielectric films by emission microscopy , 1986, 1986 International Electron Devices Meeting.

[61]  N. Khurana,et al.  Analysis of Product Hot Electron Problems by Gated Emission Microscopy , 1986, 24th International Reliability Physics Symposium.

[62]  L. W. Davies,et al.  Recombination Radiation from Silicon Under Strong-Field Conditions , 1961 .

[63]  Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors , 1991, ESSDERC '91: 21st European Solid State Device Research Conference.