The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
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M. Kulagina | I. P. Smirnova | V. Davydov | S. Troshkov | A. Smirnov | A. V. Sakharov | A. F. Tsatsulnikov | A. N. Smirnov | W. Lundin | E. Zavarin | A. F. Tsatsulnikov | M. G. Popov | V. Davydov | E. E. Zavarin