Investigations ofparallel connected IGBT'susingElectromagnetic field analysis

Chipcurrent imbalances caused bythestructure andlayout ofmaincircuit andgatecircuit inan Insulated GateBipolar Transistor (IGBT)modulewereanalyzed usingthree-dimensional electromagnetic analysis. Toconfirm theresults oftheanalysis, wealso measured thecurrent ofeach chip using atest module. Agoodagreement between theanalytical result andthemeasturement result wasachieved. Furthermore, wewereabletospecify thekeyfactors ofcurrent imbalance andthe effectiveniess ofthedesign using three-dimensional electromagnetic analysis wasproven.