Synthesis of transconductor/multiplier circuits for gallium arsenide technology

A class of circuits is defined having transconductor/multiplier type response functions, which can be synthesized by making use of the square-law drain current versus gate-source voltage characteristic of depletion-mode gallium arsenide MESFETs, and which includes generalized transconductors and multipliers as special cases. Implementation is based on a general current differencing architecture in conjunction with voltage processing building blocks. The synthesis procedure presented generates a multitude of circuits, can allow equivalent circuits of alternative topology to be easily generated, and provides an increased understanding of different classes of transconductor/multiplier-type response functions and the relationship between these functions and circuit realizations. >

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