Study of bending-induced strain effects on MuGFET performance

The impact of stress induced by biaxial mechanical bending on multiple-gate FET (MuGFET) performance is studied. For relatively low levels of bending-induced surface strain (~ 0.1%), significant enhancements in the driving current can be achieved and maintained with gate-length scaling. This makes package strain a potentially attractive approach to enhancing MuGFET-based CMOS performance at low cost. For bending-induced strain, the enhancements in electron mobility and (110) hole mobility are well predicted by the piezoresistance model using the coefficients for bulk-Si, but the impact of stress on (100) hole mobility is more complex

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