InAsSb strained‐layer superlattices for long wavelength detector applications

InAsSb strained‐layer superlattices (SLS’s) are proposed as novel III–V semiconductor materials with the potential for long wavelength intrinsic detector applications. Theoretical studies of the band gaps of various InAs0.4Sb0.6/InAs1−xSbx SLS’s with x > 0.6 have been carried out. The results indicate that the wavelength response of various SLS’s with x ≳ 0.73 can be extended to 12 μm at 77 K through the intentional use of layer strains. These new structures offer the metallurgical and processing advantages of III–V semiconductors for 12 μm detector applications. Further advantages include a weaker dependence of the SLS band gap on composition and reduced band‐to‐band tunneling in the SLS compared to bulk Hg0.8Cd0.2Te.