论文信息 - Relaxed SiGe buffers with thicknesses below 0.1 μm - 字舞流文

Relaxed SiGe buffers with thicknesses below 0.1 μm

Abstract Virtual substrates with relaxed SiGe buffers on Si substrates are needed for strain adjusted heterodevices with high Ge content. We have investigated the degree of relaxation in thin (

Matthias Bauer | Erich Kasper | Michael Oehme | M. Oehme | E. Kasper | F. Ernst | Howard J. Herzog | M. Bauer | H. Herzog | Frank Ernst | Klara Lyutovich | K. Lyutovich

[1] Friedrich Schäffler,et al. High-mobility Si and Ge structures , 1997 .

[2] Herzog,et al. Kinetics of ordered growth of Si on Si(100) at low temperatures. , 1989, Physical review. B, Condensed matter.

[3] Q. Huang,et al. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy , 1996 .

[4] M. Oehme,et al. New virtual substrate concept for vertical MOS transistors , 1998 .

[5] M. Oehme,et al. Ion assisted MBE growth of SiGe nanostructures , 1998 .

[6] E. Kasper. Growth and properties of Si/SiGe superlattices , 1986 .

[7] LeGoues,et al. Anomalous strain relaxation in SiGe thin films and superlattices. , 1991, Physical review letters.

[8] D. J. Eaglesham,et al. Semiconductor molecular‐beam epitaxy at low temperatures , 1995 .