Field controlled thyristors-a new family of power semiconductors with advanced circuitry

Field-controlled thyristors (FCTs) exhibiting true normally-off characteristics without deterioration of the on-state are reported. Snubberless switching capability has been extended to 1200 V and 16 A (200 A/cm/sup 2/, dynamic avalanche). A novel latching mechanism, called current punchthrough, that limits the turn-off current is presented. Typical devise characteristics are reported for both a normally-on FCT with lifetime control (dV/dt=10 kV/ mu s) and a normally-off FCT without lifetime control (dV/dt=600 V/ mu s). The influence of the drive circuit (MOSFET-FCT and thyristor-FCT cascades) is discussed.<<ETX>>

[1]  B. J. Baliga,et al.  Vertical channel field-controlled thyristors with high gain and fast switching speeds , 1978, IEEE Transactions on Electron Devices.

[2]  J. Voboril,et al.  Verigrid-FCTh Switching 10A at 1000V , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

[3]  M. Kurata,et al.  Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics , 1985, 1985 International Electron Devices Meeting.

[4]  J. Nishizawa,et al.  Field-effect transistor versus analog transistor (static induction transistor) , 1975, IEEE Transactions on Electron Devices.

[5]  B.J. Baliga.  The asymmetrical field-controlled thyristor , 1980, IEEE Transactions on Electron Devices.

[6]  H. Ohashi,et al.  1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power device , 1986, 1986 International Electron Devices Meeting.

[7]  M. Stoisiek,et al.  MOS GTO—A turn off thyristor with MOS-controlled emitter shorts , 1985, 1985 International Electron Devices Meeting.

[8]  V.A.K. Temple,et al.  Effect of temperature and load on MCT turn-off capability , 1986, 1986 International Electron Devices Meeting.

[9]  B. Jayant Baliga,et al.  High gain power switching using field controlled thyristors , 1982 .

[10]  J. Gobrecht,et al.  Properties of a high-power field-controlled thyristor , 1986, 1986 International Electron Devices Meeting.

[11]  J. Gobrecht,et al.  A highly interdigitated GTO power switch with recessed gate structure , 1984, 1984 International Electron Devices Meeting.