Ultra-Low Loss 600V - 1200V GaN Power Transistors for High Efficiency Applications

An emerging generation of high voltage (600V - 1200V) GaN HEMTs are compared to the best in class existing technologies and are shown to maintain a significant advantage in switching performance. Compared to the latest available GaN and Si superjunction MOSFET at 650V, these GaN devices show > 5X lower switching energies with an Ron Qg product less than 1 nC Omega. These GaN devices are extended to show > 1200V breakdown voltages and have switching losses 4X lower than even SiC MOSFETs with similar ratings.