论文信息 - Temperature Stabilization of GaAs FET Oscillators using Dielectric Resonators

Temperature Stabilization of GaAs FET Oscillators using Dielectric Resonators

A model of frequency drift with temperature of GaAs FET oscillators, stabilized using dielectric resonators is presented. Conditions for output power, oscillation frequency and frequency stability have been derived. A stacked resonator with linear resonance frequency-temperature characteristic has been developed using Barium Titanate and Titanium Zirconate dielectric material. It enabled the realization of a highly stable oscillator at 11.5 GHz with total drift of ±120 KHz in the temperature range of ¿20°C to 80°C.

C. Tsironis | P. Lesartre

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