Structure and optical properties of PECVD-prepared As-Se-Te chalcogenide films designed for the IR optical applications

For the first time films of the As-Se-Te (15≤As≤40, 30≤Se≤65, 5≤Te≤30) chalcogenide system have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low pressure (0.1 Torr). RF (40 MHz) inductively coupled non-equilibrium plasma discharge has been chosen as the initiator of chemical interaction between precursors. Elemental As, Se, and Te of high-purity were used as the initial substances. High-pure argon was utilized as career gas as plasma feed gas. The obtained chalcogenide planar materials have been studied in terms their physical-chemical properties. The films were modified by continuous and femtosecond laser irradiation.

[1]  D. Dorosz,et al.  Investigation of the composition-structure-property relationship of AsxTe100-x films prepared by plasma deposition. , 2018, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

[2]  G. Chidichimo,et al.  A new method for synthesis of As-Te chalcogenide films , 2017 .

[3]  G. Chidichimo,et al.  Synthesis and properties of AsxTe100−x films prepared by plasma deposition via elemental As and Te , 2017 .

[4]  I. Kaban,et al.  The structure of As3Se5Te2 infrared optical glass , 2009 .

[5]  J. Freitas,et al.  Structural investigation of chalcogenide and chalcohalide glasses using Raman spectroscopy , 1999 .

[6]  J. Tauc,et al.  Amorphous and liquid semiconductors , 1974 .

[7]  P. Rozier,et al.  Structural characterizations of As–Se–Te glasses , 2011 .

[8]  L. Mochalov,et al.  Optical emission of two-dimensional arsenic sulfide prepared by plasma , 2018 .

[9]  J. Adam,et al.  Aging process of photosensitive chalcogenide films deposited by electron beam deposition , 2011 .

[10]  P. Villares,et al.  Crystallization kinetics in the As-Se-Te system , 1990 .

[11]  Kathleen Richardson,et al.  Role of S∕Se ratio in chemical bonding of As–S–Se glasses investigated by Raman, x-ray photoelectron, and extended x-ray absorption fine structure spectroscopies , 2005 .

[12]  G. Chidichimo,et al.  Influence of Plasma-Enhanced Chemical Vapor Deposition Parameters on Characteristics of As–Te Chalcogenide Films , 2017, Plasma Chemistry and Plasma Processing.

[13]  D. Dorosz,et al.  Infrared and Raman spectroscopy study of AsS chalcogenide films prepared by plasma-enhanced chemical vapor deposition. , 2018, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

[14]  V. Vorotyntsev,et al.  Influence of the preparation technique on the optical properties and content of heterophase inclusions of AS_2S_3 chalcogenide glasses , 2016 .

[15]  G. Chidichimo,et al.  Structural and optical properties of arsenic sulfide films synthesized by a novel PECVD-based approach , 2017 .

[16]  R. Swanepoel.  Determination of the thickness and optical constants of amorphous silicon , 1983 .

[18]  V. Vorotyntsev,et al.  Comparison of optical properties and impurities content of Ge-Sb-S-I glasses prepared by different methods , 2016 .

[19]  Yu A. Malkov,et al.  Comparative study of nonlinear optical properties of Ge-S-I glasses with different macrocompositions , 2016 .