论文信息 - Investigation of hydrogen implantation induced blistering in GaN

Investigation of hydrogen implantation induced blistering in GaN

A systematic investigation of surface blister formation on GaN epitaxial layers implanted with 100 keV H2+ ions with a dose of 1.3×1017 cm–2 and annealed at various temperatures in the range of 350–700 °C was carried out. Two different activation energies were found for the formation of surface blisters: 1.79 eV in the lower temperature regime of 350–400 °C and 0.48 eV in the higher temperature regime of 400–700 °C. The depth and width of the blisters were determined using a stylus profilometer. The hydrogen implantation-induced damage was assessed using cross-sectional transmission microscopy revealing a band of defects extending from 230–500 nm from the surface of GaN. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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