论文信息 - A 100mW 9.6Gb/s Transceiver in 90nm CMOS for Next-Generation Memory Interfaces

A 100mW 9.6Gb/s Transceiver in 90nm CMOS for Next-Generation Memory Interfaces

An architecture for next-generation memory interface is demonstrated using 90nm bulk silicon to provide a 2-tap emphasized TX with <19ps jitter at 9.6Gb/s. The circuit uses a programmable PLL to track jitter up to 200MHz. The transceiver consumes 100mW from a 1V supply

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