200MHz/200MSPS 3.2W at 1.5V Vdd, 9.4Mbits ternary CAM with new charge injection match detect circuits and bank selection scheme
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G. Kasai | Y. Takarabe | K. Furumi | M. Yoneda | Gen Kasai | Yukihiro Takarabe | Koji Furumi | M. Yoneda
[1] Rina Panigrahy,et al. Reducing TCAM power consumption and increasing throughput , 2002, Proceedings 10th Symposium on High Performance Interconnects.
[2] A. Sheikholeslami,et al. A current-saving match-line sensing scheme for content-addressable memories , 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
[3] James B. Kuo,et al. A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell , 2001 .