Memory device having vertical channel with double split gates and fabrication method thereof

The present invention has a double-split-gate structure in the vertical channel The flash memory device and relates to a method of manufacturing the same, with the selection gates in the lower sides of the trench formed so as to have a vertical channel as to share a control gate, the advantages of a conventional split-gate memory device (high program efficiency) is as salrimyeo, it takes It was able to significantly reduce the surface area, when applied to a memory device according to the invention in the flash memory array, so, just one contact to the word line, bit line and select gate line, respectively, to reduce the area required for contact than the conventional unit cell It has the effect of reducing the per unit area significantly. The vertical channel, a split gate, select gate, the flash memory device