Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
暂无分享,去创建一个
Kenichi Iga | Fumio Koyama | Tomoyuki Miyamoto | Takashi Kondo | D. Schlenker | F. Koyama | K. Iga | T. Miyamoto | T. Kondo | D. Schlenker | M. Kawaguchi | M. Kawaguchi | Eric Gouardes | E. Gouardes
[1] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .
[2] Wolfgang Stolz,et al. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 /spl mu/m , 1999 .
[3] K. Iga,et al. Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine , 1999 .
[4] F. Koyama,et al. Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer , 1999 .