Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition
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P. McIntyre | J. Ku | N. Lee | H. Chang | M. Cho | D. Ko | D. Moon | Jong Heun Lee | S. Kang | B. Min | Hackjin Kim
暂无分享,去创建一个
P. McIntyre | J. Ku | N. Lee | H. Chang | M. Cho | D. Ko | D. Moon | Jong Heun Lee | S. Kang | B. Min | Hackjin Kim