论文信息 - Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition - 字舞流文

Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

K. Endo | T. Matsukawa | S. O'Uchi | M. Masahara | H. Yamauchi | Y. Ishikawa | J. Tsukada | K. Sakamoto | Yongxum Liu