ESD characterisation of a-IGZO TFTs on Si and foil substrates

Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) Thin-Film Transistors (TFTs) integrated with Si based CMOS processes is an emerging technology in ultra-low power applications. ESD characteristics of a-IGZO TFTs with a Si substrate are studied and compared to their characteristics on traditional foil/glass substrate. The ESD performance is shown to be improved, thanks to improved thermal properties of the different buffer material. The layout dependency of ESD behaviors in Si substrate TFTs are investigated in order to meet the 1kV HBM ESD requirement. An on-chip ESD protection design with a gate-coupling TFT is proposed.

[1]  Kris Myny,et al.  Organic Imager on Readout Backplane Based on TFTs With Cross-Linkable Dielectrics , 2014, IEEE Photonics Technology Letters.

[2]  Kris Myny,et al.  16.6 Flexible thin-film NFC transponder chip exhibiting data rates compatible to ISO NFC standards using self-aligned metal-oxide TFTs , 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

[3]  Juin J. Liou,et al.  Study of Organic Thin-Film Transistors Under Electrostatic Discharge Stresses , 2011, IEEE Electron Device Letters.

[4]  Wim Dehaene,et al.  16.5 A flexible thin-film pixel array with a charge-to-current gain of 59µA/pC and 0.33% nonlinearity and a cost effective readout circuit for large-area X-ray imaging , 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

[5]  Kris Myny,et al.  P-6: Impact of Buffer Layers on the Self-Aligned Top-Gate a-IGZO TFT Characteristics , 2015 .

[6]  Kris Myny,et al.  Flexible AMOLED display with integrated gate driver operating at operation speed compatible with 4k2k , 2015 .

[7]  R. Street.  Thin‐Film Transistors , 2009 .

[8]  S. Steudel,et al.  ESD protection design in a-IGZO TFT technologies , 2016, 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

[9]  Ya-Hsiang Tai,et al.  Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors , 2013, Journal of Display Technology.

[10]  Lei Wang,et al.  Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress , 2014, IEEE Electron Device Letters.