Quantum-Well Semiconductor Lasers

A double-heterostructure laser consists of an active layer sandwiched between two higher-gap cladding layers. The active-layer thickness is typically in the range of 0.1–0.3 µm. In the last few years, double-heterostructure lasers with an active-layer thickness of ~ 10 nm have been fabricated. The carrier (electron or hole) motion normal to the active layer in these structures is restricted. As a result, the kinetic energy of the carriers moving in that direction is quantized into discrete energy levels similar to the well-known quantum-mechanical problem of the one-dimensional potential well, and hence these lasers are called quantum-well lasers.

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