Hydrogen-related electron traps in proton-bombarded float zone silicon

Abstract P + n diodes have been irradiated at nominal room temperature by 1.3 MeV H + or 5.0 MeV He 2+ ions to doses in the range 10 8 –10 10 cm −2 . The diodes were analysed with respect to electron traps in the forbidden band gap by applying deep level transient spectroscopy. It is found that two levels, at approximately 0.32 and 0.45 eV below the conduction band, originate from irradiation-induced defects involving hydrogen. The levels appear at low doses and are presumably caused by low order complexes. On the basis of the experimental results and of computer simulations of the H + implantation profile it is speculated that the two peaks may originate from vacancy-oxygen and divacancy configurations which are partly saturated with hydrogen.

[1]  D. Silber,et al.  Radiation defect distribution in proton‐irradiated silicon , 1987 .

[2]  D. V. Lang,et al.  Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions , 1974 .

[3]  E. Sun,et al.  Electron‐irradiation‐induced divacancy in lightly doped silicon , 1976 .

[4]  B. Svensson,et al.  Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy , 1989 .

[5]  A. Hallén,et al.  An MeV-ion implanter for large area applications , 1989 .

[6]  G. D. Watkins,et al.  SPIN RESONANCE IN ELECTRON IRRADIATED SILICON , 1959 .

[7]  J. Bartko,et al.  Production of Fast Switching Power Thyristors by Proton Irradiation , 1983, IEEE Transactions on Nuclear Science.

[8]  M. Willander,et al.  Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence , 1987 .

[9]  G. D. Watkins,et al.  DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER , 1961 .

[10]  G. D. Watkins,et al.  Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center , 1961 .

[11]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[12]  R.P. Love,et al.  Localized lifetime control in insulated-gate transistors by proton implantation , 1986, IEEE Transactions on Electron Devices.

[13]  M. Hüppi.  The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing , 1991 .