论文信息 - Distributed Equivalent-Circuit Model for Traveling-Wave FET Design

Distributed Equivalent-Circuit Model for Traveling-Wave FET Design

Based on reliable theoretical results, a distributed MESFET model is developed. It consists of equivalent-circuit elements which can be evaluated directly from FET material constants and geometry. The deviations with respect to full-wave-analysis results are investigated and some applications are shown.

W. Heinrich | W. Heinrich

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