Enhanced efficiency of AlGaInP disk laser by in-well pumping.

The performance of a 665-nm GaInP disk laser operated continuous-wave at 15°C both in-well-pumped at 640 nm and barrier pumped at 532 nm is reported. The efficiency with respect to the absorbed power was enhanced by 3.5 times when using a 640-nm pump instead of a 532-nm pump. In-well pumping which is based on the absorption of the pump photons within the quantum-well heterostructures of the gain region instead of short-wavelength absorption in the barrier and spacer regions reduces the quantum defect between pump and laser photon and hence the heat generation. A slope efficiency of 60% with respect to the absorbed pump power was obtained by in-well pumping at 15°C. Continuous-wave laser operation was further demonstrated at heat sink temperatures of up to 55°C. Both the measurement of photoluminescence and COMSOL simulation show that the overall heat load in the in-well pumped laser is smaller than in the barrier-pumped laser. These results demonstrate the potential of optical in-well pumping for the operation of red AlGaInP disk lasers if combined with means for efficient pump-light absorption.

[1]  M. Weyers,et al.  Optical in-well pumping of a semiconductor disk laser with high optical efficiency , 2005, IEEE Journal of Quantum Electronics.

[2]  Markus Pessa,et al.  High power CW red VECSEL with linearly polarized TEM00 output beam. , 2005, Optics express.

[3]  M. Dawson,et al.  Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser , 2006 .

[4]  M. Kuznetsov,et al.  High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams , 1997, IEEE Photonics Technology Letters.

[5]  P. Michler,et al.  Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power , 2011 .

[6]  J. Nichols,et al.  Tuning electronic structure via epitaxial strain in Sr2IrO4 thin films , 2013, 1302.0918.

[7]  Emmi Kantola,et al.  High-efficiency 20 W yellow VECSEL. , 2014, Optics express.

[8]  C. Choy,et al.  Dielectric properties and abnormal C-V characteristics of Ba[sub 0.5]Sr[sub 0.5]TiO₃-Bi[sub 1.5]ZnNb[sub 1.5]O[sub 7] composite thin films grown on MgO (001) substrates by pulsed laser deposition , 2006 .

[9]  M. Rattunde,et al.  Thermal Management in 2.3- $\mu{\hbox {m}}$ Semiconductor Disk Lasers: A Finite Element Analysis , 2008, IEEE Journal of Quantum Electronics.

[10]  Roman Bek,et al.  High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL , 2014 .

[11]  Adolf Giesen,et al.  Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm , 2002, SPIE OPTO.

[12]  Jorg Hader,et al.  106 W continuous-wave output power from vertical-external-cavity surface-emitting laser , 2012 .

[13]  P. Michler,et al.  High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W , 2013 .

[14]  Wei Zhang,et al.  Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser. , 2006, Applied optics.

[15]  Allister I. Ferguson,et al.  Optical in-well pumping of a vertical-external-cavity surface-emitting laser , 2004 .

[16]  B. Raabe,et al.  160/spl deg/C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers , 2003 .

[17]  F. Rinaldi,et al.  Efficient Gallium–Arsenide Disk Laser , 2007, IEEE Journal of Quantum Electronics.

[18]  Joachim Wagner,et al.  Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser. , 2011, Optics letters.