On understanding switching and EMI performance of SiC power JFETs to design a 75 W high voltage flyback converter

Normally-off three-terminal SiC VJFETs having excellent low switching loss, high temperature and high voltage rating are commercially available. This paper compares the switching and EMI performance of SiC Power JFETs to a standard MOSFET on a 75 W high voltage flyback converter and highlights suitable design strategies needed for using a SiC Power JFET.

[1]  L. Tolbert,et al.  Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses , 2001, IECON'01. 27th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.37243).

[2]  Ulrich Schmid,et al.  SiC devices for advanced power and high-temperature applications , 2001, IEEE Trans. Ind. Electron..

[3]  T. Chow,et al.  A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[4]  Johann W. Kolar,et al.  A gate drive circuit for silicon carbide JFET , 2003, IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468).

[5]  Dominique Planson,et al.  Silicon carbide power devices , 1998, 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).